The starting point of this project is the complementary knowhow of the consortium with the expertise of UM on the growth and study of GaSb-based VCSELs, the capability of LAAS for VCSELs processing, in particular regarding the controlled oxidation of Al(Ga)As layers, and of FOTON for their expertise in dielectric materials dedicated to Bragg mirror.

UM is ranked among the first ten scientific universities in France. The present project will be managed by UM which is fully experienced in this field with dedicated staff in legal, financial and administrative issues. The nanomir group from the electrical engineering department (IES) )has been involved in the MBE growth of antimonide-based semiconductors for MIR optoelectronics for ~20 years. It is now recognized as one of the world leaders in this field. NANOMIR runsan EQUIPEX (EXTRA) dedicated the growth and technology of Sb-based compounds and devices. It is now equipped with three MBE systems dedicated to the fabrication of these materials, possesses material characterization setups (AFM, low-temperature photoluminescence, High-resolution X-Ray diffraction, etc…), and has access to a fully equipped cleanroom for device processing.

At the LAAS-CNRS, research on microcavity devices has been carried out in the Photonics team since 1990 and has focused on 850nm GaAs-based VCSELs since 1996. Fabrication and optimization of the properties of oxide-confined single-mode VCSELs as well as dual-function (emission/photodetection) VCSELs have been extensively studied in the team these last years. The main research axis is the integration of the optical functionalities within the VCSEL structures for emerging applications. Recently, the team has been involved into three European projects (Optonanogen, FunFACS, EMRP) and several ANR projects within which original III-V technological approaches have been proposed and implemented. The LAAS technological platform is part of the national RENATECH network. These pooled facilities allow integration of new devices for energy management, telecommunications, chemistry and biology, the development of specific technology to the production of demonstrators on the basis of flexible chains.

FOTON-OHM group has more than 20 years of experience in material growth, characterizations and processing of semiconductor optoelectronic devices. Its main research activity is devoted to the growth study and the optoelectronic applications of nanostructures grown on InP substrate, and more recently on GaP and Si substrates. The laboratory has several growth facilities, and hosts the Nanorennes technological platform, and many optical, structural and electrical characterizations experiments. FOTON has demonstrated several important breakthroughs in quantum dots/dashes (QD/QDH) grown on InP and has developed many photonic devices based on such nanostructures and especially hybrid VCSELs at 1.55 µm incorporating dielectric DBR.